화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Field oxide thinning behavior in local oxidation of silicon process under enhanced oxidation conditions
Jang SA, Yeo IS, Kim YB
Journal of the Electrochemical Society, 145(5), 1664, 1998
2 Oxide-Growth Enhancement Related to Annealing-Induced Arsenic Accumulation in the Si/SiO2 Interface Region
Berger HH, Muller B, Jacob K
Journal of the Electrochemical Society, 143(1), L15, 1996
3 Oxide-Growth Enhancement on Highly N-Type Doped Silicon Under Steam Oxidation
Biermann E, Berger HH, Linke P, Muller B
Journal of the Electrochemical Society, 143(4), 1434, 1996
4 Impact of Reactive Ion Etching Induced Carbon Contamination on Oxidation of Silicon
Tsuchiaki M, Kvitek RJ, Parks C, Murphy RJ, Ohiwa T, Watanabe T
Journal of the Electrochemical Society, 143(7), 2378, 1996
5 Characteristics of the Thermal-Oxidation of Heavily Boron-Doped Polycrystalline Silicon Thin-Films
Boukezzata M, Bielledaspet D, Sarrabayrouse G, Mansour F
Thin Solid Films, 279(1-2), 145, 1996
6 Oxidation-Enhanced Diffusion of Boron and Phosphorus in Heavily-Doped Layers in Silicon
Roth DJ, Plummer JD
Journal of the Electrochemical Society, 141(4), 1074, 1994