| 1 |
Enhanced performance of perovskite solar cells using DNA-doped mesoporous-TiO2 as electron transporting layer
Peng X, Lu HL, Zhuang J, Liu XC, Ma Z, Wang HY, Guo ZL, Wang QT, Zhang H, Zhao SS
Solar Energy, 206, 855, 2020 |
| 2 |
Computational characterization of nitrogen-doped carbon nanotube functionalized by Fe adatom and Fe substituent for oxygen reduction reaction
Yoon SH, Yu C, Han A, Park H, Elbashir N, Han DS
Applied Surface Science, 485, 342, 2019 |
| 3 |
Wet chemical surface smoothing method for improving surface passivation on monocrystalline silicon
Ji FX, Zhou CL, Jia XJ, Gong L, Zhu JJ, Wang WJ
Chemical Physics Letters, 730, 60, 2019 |
| 4 |
Influence on curvature induced stress to the flatband voltage and interface density of 4H-SiC MOS structure
Xu HY, Wan CP, Sang L, Ao JP
Journal of Crystal Growth, 505, 59, 2019 |
| 5 |
Experimental validation of the surface state distribution model in the Suzuki theory to qualify the thin film surface materials
Pichon L, Yang K, Salaun AC
Solid-State Electronics, 154, 12, 2019 |
| 6 |
AlN passivation effect on Au/GaN Schottky contacts
Kim H, Kwon Y, Choi BJ
Thin Solid Films, 670, 41, 2019 |
| 7 |
Rectifying and breakdown voltage enhancement of Au/n-GaN Schottky diode with Al-doped ZnO films and its structural characterization
Janardhanam V, Jyothi I, Lee SN, Reddy VR, Choi CJ
Thin Solid Films, 676, 125, 2019 |
| 8 |
The charger transfer electronic coupling in diabatic perspective: A multi-state density functional theory study
Guo XW, Qu ZX, Gao JL
Chemical Physics Letters, 691, 91, 2018 |
| 9 |
질산산화법을 이용한 SiO2/Si 구조의 계면결함 제거
최재영, 김도연, 김우병
Korean Journal of Materials Research, 28(2), 118, 2018 |
| 10 |
Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2
Jung WS, Lim D, Han H, Sokolov AS, Jeon YR, Choi C
Solid-State Electronics, 149, 52, 2018 |
