| 1 |
Piezoelectric photo-thermal study of GaAs single-quantum well embedded in GaAs/AlAs short-period superlattlices
Wang P, Nakagawa T, Fukuyama A, Akashi Y, Fujiwara K, Kari T
Renewable Energy, 33(2), 304, 2008 |
| 2 |
Photoreflectance spectroscopy of semiconductor structures at hydrostatic pressure: A comparison of GaInAs/GaAs and GaInNAs/GaAs single quantum wells
Kudrawiec R, Misiewicz J
Applied Surface Science, 253(1), 80, 2006 |
| 3 |
Study of carrier localization in InGaN/GaN quantum well blue-light-emitting diode structures
Chen JH, Feng ZC, Wang JC, Tsai HL, Yang JR, Parekh A, Armour E, Faniano P
Journal of Crystal Growth, 287(2), 354, 2006 |
| 4 |
Electroluminescence studies under forward and reverse bias conditions of a nitride-rich GaN(1-x)P(x)SQW structure LED grown by laser-assisted metal-organic chemical vapor deposition
Kikawa J, Yoshida S, Itoh Y
Solid-State Electronics, 47(3), 523, 2003 |
| 5 |
High-resolution X-ray diffraction study of AlAs/Al0.5Ga0.5As/GaAs quantum well structures grown by molecular beam epitaxy on (11 n)A GaAs
Villar C, Sanz-Hervas A, Aguilar M, Vaccaro PO, Abril EJ, Lopez M, Fujita K
Journal of Crystal Growth, 213(3-4), 214, 2000 |
