화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 Accurate diode behavioral model with reverse recovery
Banas S, Divin J, Dobes J, Panko V
Solid-State Electronics, 139, 31, 2018
2 SOI MESFETs on high-resistivity, trap-rich substrates
Mehr P, Zhang X, Lepkowski W, Li CJ, Thornton TJ
Solid-State Electronics, 142, 47, 2018
3 A circuit model for defective bilayer graphene transistors
Umoh IJ, Moktadir Z, Hang SJ, Kazmierski TJ, Mizuta H
Solid-State Electronics, 119, 33, 2016
4 Universal analytic model for tunnel FET circuit simulation
Lu H, Esseni D, Seabaugh A
Solid-State Electronics, 108, 110, 2015
5 Extraction and modeling of layout-dependent MOSFET gate-to-source/drain fringing capacitance in 40 nm technology
Sun LJ, Shang GB, Liu LL, Cheng J, Guo A, Ren Z, Hu SJ, Chen SM, Zhao YH, Chan MS, Zhang L, Li XJ, Shi YL
Solid-State Electronics, 111, 118, 2015
6 Compact model of power MOSFET with temperature dependent Cauer RC network for more accurate thermal simulations
Marek J, Chvala A, Donoval D, Pribytny P, Molnar M, Mikolasek M
Solid-State Electronics, 94, 44, 2014
7 BSIM-CG: A compact model of cylindrical/surround gate MOSFET for circuit simulations
Venugopalan S, Lu DD, Kawakami Y, Lee PM, Niknejad AM, Hu CM
Solid-State Electronics, 67(1), 79, 2012
8 Automatic extraction of an equivalent circuit from a TFT-LCD unit cell for LCD TV application
Yoon SI, Jung CY, Won T
Molecular Crystals and Liquid Crystals, 476, 473, 2007
9 A compact model for circuit simulation of TFT-LCD panel
Yoon SI, Yoon SH, Jung CY, Won T
Molecular Crystals and Liquid Crystals, 458, 129, 2006
10 Large-signal modeling of SOI MESFETs
Balijepalli A, Vijayaraghavan R, Ervin J, Yang J, Islam SK, Thornton TJ
Solid-State Electronics, 50(6), 943, 2006