| 1 |
Growth and optical properties of epitaxial GaN films on Si(111) using single gas-source molecular beam epitaxy
Torrison L, Tolle J, Tsong IST, Kouvetakis J
Thin Solid Films, 434(1-2), 106, 2003 |
| 2 |
Low-frequency noise characteristics of highly-strained In0.5Ga0.5P/In0.33Ga0.67As pseudomorphic high electron mobility transistor
Kim JH, Song JI
Solid-State Electronics, 45(9), 1571, 2001 |
| 3 |
Scanning tunneling microscopy and time-resolved photoluminiscence spectroscopy study of self-organized GaP/InP quantum dot structures
Mori J, Asahi H, Fudeta M, Noh JH, Watanabe D, Matsuda S, Asami K, Narukawa Y, Kawakami Y, Fujita S, Kaneko T, Gonda S
Applied Surface Science, 159, 498, 2000 |
| 4 |
Staggered vertical self-organization of stacked InAs/InAlAs quantum wires on InP(001)
Brault J, Gendry M, Marty O, Pitaval M, Olivares J, Grenet G, Hollinger G
Applied Surface Science, 162, 584, 2000 |
| 5 |
Preferential group-V replacement at InGaP/GaAs interfaces grown by gas-source MBE
Ouchi K, Mishima T
Journal of Crystal Growth, 209(2-3), 242, 2000 |
| 6 |
Improved properties of polycrystalline GaN grown on silica glass substrate
Hiroki M, Asahi H, Tampo H, Asami K, Gonda S
Journal of Crystal Growth, 209(2-3), 387, 2000 |
| 7 |
Quasi-persistent photoconductivity of double-heterojunction pseudomorphic high-electron-mobility transistor epitaxial wafers
Kizuki H, Kouji Y, Hayafuji N, Kajikawa Y
Journal of Crystal Growth, 209(2-3), 440, 2000 |
| 8 |
Gas-source MBE growth of Tl-based III-V semiconductors and their Raman scattering characterization
Zhou YK, Asahi H, Ayabe A, Takenaka K, Fushida M, Asami K, Gonda S
Journal of Crystal Growth, 209(2-3), 547, 2000 |
| 9 |
Effects of phosphorous beam equivalent pressure on GaInAsP/GaAs grown by solid source molecular beam epitaxy with a valve phosphorous cracker cell
Wang XZ, Zhang DH, Zheng HQ, Yoon SF, Kam CH, Shi W, Raman A
Journal of Crystal Growth, 210(4), 458, 2000 |
| 10 |
Incorporation mechanism of dopant phosphorus in the Si growth using Si2H6 and PH3
Hirose F
Journal of Crystal Growth, 212(1-2), 103, 2000 |
