| 1 |
High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer
Lim JG, Yang SD, Yun HJ, Jung JK, Park JH, Lim C, Cho GS, Park SG, Huh C, Lee HD, Lee GW
Solid-State Electronics, 140, 134, 2018 |
| 2 |
Hydrogen-induced program threshold voltage degradation analysis in SONOS wafer
Lin Q, Zhao C, Sheng N
Solid-State Electronics, 116, 60, 2016 |
| 3 |
Comprehensive understanding of charge lateral migration in 3D SONOS memories
Liu LF, Arreghini A, Van den Bosch G, Pan LY, Van Houdt J
Solid-State Electronics, 116, 95, 2016 |
| 4 |
Self-consistent simulation on multiple activation energy of retention characteristics in charge trapping flash memory
Park S, Choi S, Jun KS, Kim H, Rhee S, Park YJ
Solid-State Electronics, 113, 144, 2015 |
| 5 |
Study of charge loss mechanisms for nano-sized localized trapping SONOS memory devices
Xu Y, Yue H, Zhao FF
Solid-State Electronics, 91, 118, 2014 |
| 6 |
Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications
An HM, Kim HD, Kim TG
Materials Research Bulletin, 48(12), 5084, 2013 |
| 7 |
Investigation of gate length and fringing field effects for program and erase efficiency in gate-all-around SONOS memory cells
Kim MS, Choi SJ, Moon DI, Duarte JP, Kim S, Choi YK
Solid-State Electronics, 79, 7, 2013 |
| 8 |
Study of charge trapping characteristics of SONOS with various trapping layers using gate-sensing and channel-sensing (GSCS) method
Liao JH, Lin HJ, Lue HT, Du PY, Hsieh JY, Yang LW, Yang T, Chen KC, Lu CY
Solid-State Electronics, 81, 51, 2013 |
| 9 |
3D gate-all-around bandgap-engineered SONOS flash memory in vertical silicon pillar with metal gate
Oh JS, Yang SD, Lee SY, Kim YS, Kang MH, Lim SK, Lee HD, Lee GW
Solid-State Electronics, 86, 6, 2013 |
| 10 |
Influence of atomic layer deposition chemistry on high-k dielectrics for charge trapping memories
Nikolaou N, Dimitrakis P, Normand P, Ioannou-Sougleridis V, Giannakopoulos K, Mergia K, Kukli K, Niinisto J, Ritala M, Leskela M
Solid-State Electronics, 68, 38, 2012 |
