화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Detailed investigation of effective field, hole mobility and scattering mechanisms in GeOI and Ge pMOSFETs
Van Den Daele W, Le Royer C, Augendre E, Mitard J, Ghibaudo G, Cristoloveanu S
Solid-State Electronics, 59(1), 25, 2011
2 New floating-body effect in partially depleted SOI pMOSFET due to direct-tunneling current in the partial n plus poly gate
Guegan G, Gwoziecki R, Touret P, Raynaud C, Pretet J, Gonnard O, Gouget G, Deleonibus S
Solid-State Electronics, 53(7), 741, 2009
3 C-infinity-continuous high-temperature model for low-doped accumulation mode silicon-on-insulator pMOSFETs
Houk Y, Iniguez B, Flandre D, Nazarov A
Solid-State Electronics, 50(7-8), 1261, 2006