검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics Galeti M, Rodrigues M, Martino JA, Collaert N, Simoen E, Claeys C Solid-State Electronics, 70, 44, 2012 |
| 2 |
Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation Rodrigues M, Galeti M, Martino JA, Collaert N, Simoen E, Claeys C Solid-State Electronics, 62(1), 146, 2011 |
| 3 |
Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs Rodrigues M, Martino JA, Mercha A, Collaert N, Simoen E, Claeys C Solid-State Electronics, 54(12), 1592, 2010 |