검색결과 : 35건
| No. | Article |
|---|---|
| 1 |
Comparative study of NSB and UTB SOI MOSFETs characteristics by extraction of series resistance Karsenty A, Chelly A Solid-State Electronics, 91, 28, 2014 |
| 2 |
Strain Relaxation in Ultrathin SGOI Substrates Fabricated by Multistep Ge Condensation Method Zhang Y, Cai K, Li C, Chen SY, Lai HK, Kang JY Journal of the Electrochemical Society, 156(2), H115, 2009 |
| 3 |
Fabrication of thin-film silicon on insulator by separation by implanted oxygen layer transfer Wei X, Wu AM, Chen M, Chen J, Zhang M, Wang X, Lin CL Journal of Vacuum Science & Technology B, 26(6), L45, 2008 |
| 4 |
SOI 기술의 이해와 고찰: 소자 특성 및 공정, 웨이퍼 제조 최광수 Korean Journal of Materials Research, 15(9), 613, 2005 |
| 5 |
Comparison of ordered structure in buried oxide layers in high-dose, low-dose, and internal-thermal-oxidation separation-by-implanted-oxygen wafers Shimura T, Fukuda K, Yasutake K, Hosoi T, Umeno M Thin Solid Films, 476(1), 125, 2005 |
| 6 |
Determination of film and surface recombination in thin-film SOI devices using gated-diode technique Rudenko T, Rudenko A, Kilchytska V, Cristoloveanu S, Ernst T, Colinge JP, Dessard V, Flandre D Solid-State Electronics, 48(3), 389, 2004 |
| 7 |
Electrical properties and microstructure of buried oxide (BOX) of SIMOX studied by Conducting Atomic Force Microscopy (C-AFM) Song ZR, Chen KW, Yu YH, Luo EZ, Shen DS Thin Solid Films, 459(1-2), 58, 2004 |
| 8 |
Spectroscopic ellipsometry chraracterization of the interfacial roughness in simox wafers Li WJ, Song ZR, Tao K, Cheng XH, Yang WW, Yu YH, Wang X, Zou SC, Shen DS Thin Solid Films, 459(1-2), 63, 2004 |
| 9 |
SIMS study of oxygen in- and out-diffusion in SIMOX wafers during thermal annealing using O-18 implantation Hayashi S, Sasaki T, Kawamura K, Matsumura A, Yanagihara K, Tanaka K Applied Surface Science, 203, 504, 2003 |
| 10 |
Thickness dependent integrity of gate oxide on SOI Tsujiuchi M, Iwamatsu T, Naruoka H, Umeda H, Ipposhi T, Maegawa S, Inoue Y Applied Surface Science, 216(1-4), 329, 2003 |