| 1 |
Facet engineering for SiGe/Si stressors in advanced CMOS technology
Kasim J, Reichel C, Dilliway G, Bai B, Zakowsky N
Solid-State Electronics, 110, 19, 2015 |
| 2 |
Nano-scale chemistry of self-assembled nanostructures in epitaxial SiGe growth
Balasubramanian P, Floro JA, Gray JL, Hull R
Journal of Crystal Growth, 400, 15, 2014 |
| 3 |
Fabrication and evaluation of propagation loss of Si/SiGe/Si photonic-wire waveguides for Si based optical modulator
Kim Y, Takenaka M, Osada T, Hata M, Takagi S
Thin Solid Films, 557, 342, 2014 |
| 4 |
The demonstration of a highly efficient SiGe Type-II hetero-junction solar cell with an optimal stress design
Liao MH
Thin Solid Films, 544, 112, 2013 |
| 5 |
Formation of polycrystalline thin-film transistors with stacked poly-SiGe/poly-Si channel layer for low-voltage applications
Juang MH, Chang CW, Peng YS, Hwang CC, Wang JL, Shye DC
Thin Solid Films, 519(10), 3393, 2011 |
| 6 |
Improvement in negative differential conductance characteristics of hole resonant-tunneling diodes with high Ge fraction Si/strained Si1-xGex/Si(100) heterostructure
Seo T, Takahashi K, Sakuraba M, Murota J
Solid-State Electronics, 53(8), 912, 2009 |
| 7 |
Electrical characteristics of hole resonant tunneling diodes with high Ge fraction (x > 0.4) Si/strained Si1-xGex/Si(100) heterostructure
Seo T, Sakuraba M, Murota J
Applied Surface Science, 254(19), 6265, 2008 |
| 8 |
Microstructural change of dislocation structure around SiGe/Si interface in SGOI wafer with ramping process
Ii S, Takaki Y, Ikeda K, Nakashima H, Nakashima H
Thin Solid Films, 517(1), 38, 2008 |
| 9 |
Impact of Ge fraction modulation upon electrical characteristics of hole resonant tunneling diodes with Si/Strained Si(1-x)Ge(x)/Si(100) heterostructure
Seo T, Sakuraba M, Murota J
Thin Solid Films, 517(1), 110, 2008 |
| 10 |
Simulation of p-i-n heterojunctions built on strain-compensated Si/Si(0.40)Ge(0.60)/Si multiple quantum wells for photodetection near 1.55 mu m
Sfina N, Lazzari JL, Cuminal Y, Christol P, Said M
Thin Solid Films, 517(1), 388, 2008 |
