검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Si1-xGex growth using Si3H8 by low temperature chemical vapor deposition Takeuchi S, Nguyen ND, Goosens J, Caymax M, Loo R Thin Solid Films, 518, S18, 2010 |
| 2 |
Ni-silicide precursor for gate electrodes Ishikawa M, Muramoto I, Machida H, Imai S, Ogura A, Ohshita Y Thin Solid Films, 515(12), 4980, 2007 |
| 3 |
Chemical vapor deposition of NiSi using Ni(PF3)(4) and Si3H8 Ishikawa M, Muramoto I, Machida H, Imai S, Ogura A, Ohshita Y Thin Solid Films, 515(22), 8246, 2007 |
| 4 |
Growth of 3C-SiC/Si multilayer heterostructures by supersonic free jets Ikoma Y, Endo T, Tada T, Watanabe F, Motooka T Materials Science Forum, 338-3, 265, 2000 |
| 5 |
Conformational Effects in Photoelectron-Spectra of Tetrasilanes Imhof R, Antic D, David DE, Michl J Journal of Physical Chemistry A, 101(25), 4579, 1997 |
| 6 |
Compositional and Electrical-Properties of Si Metal-Oxide-Semiconductor Structure Prepared by Direct Photoenhanced Chemical-Vapor-Deposition Using a Deuterium Lamp Shei SC, Su YK, Hwang CJ, Yokoyama M, Pan FM Journal of Vacuum Science & Technology A, 13(2), 237, 1995 |