| 1 |
Temporal evolution of a silicon surface subject to low energy ion irradiation and concurrent sample rotation
Basu T, Pearson DA, Bradley RM, Som T
Applied Surface Science, 379, 480, 2016 |
| 2 |
Roughness development in the depth profiling with 500 eV O-2(+) beam with the combination of oxygen flooding and sample rotation
Gui D, Xing ZX, Huang YH, Mo ZQ, Hua YN, Zhao SP, Cha LZ
Applied Surface Science, 255(4), 1433, 2008 |
| 3 |
Sputter rate variations in silicon under high-k dielectric films
Bennett J, Beebe M, Sparks C, Gondran C, Vandervorst W
Applied Surface Science, 231-2, 565, 2004 |
| 4 |
Sub-keV secondary ion mass spectrometry depth profiling: comparison of sample rotation and oxygen flooding
Liu R, Wee ATS
Applied Surface Science, 231-2, 653, 2004 |
| 5 |
SIMS backside depth profiling of ultra shallow implants
Yeo KL, Wee ATS, See A, Liu R, Ng CM
Applied Surface Science, 203, 335, 2003 |
| 6 |
SIMS depth profiling of working environment nanoparticles
Konarski P, Iwanejko I, Mierzejewska A
Applied Surface Science, 203, 757, 2003 |
| 7 |
Channeling-induced asymmetric distortion of depth profiles from polycrystalline-TiN/Ti/TiN(001) trilayers during secondary ion mass spectrometry
Ramanath G, Greene JE, Petrov I, Baker JE, Allen LH, Gillen G
Journal of Vacuum Science & Technology B, 18(3), 1369, 2000 |
| 8 |
Influence of O-2(+) Energy, Flux, and Fluence on the Formation and Growth of Sputtering-Induced Ripple Topography on Silicon
Vajo JJ, Doty RE, Cirlin EH
Journal of Vacuum Science & Technology A, 14(5), 2709, 1996 |
| 9 |
Surface-Topography Development on Ion-Beam-Sputtered Surfaces - Role of Surface Inhomogeneity Induced by Ion-Beam Bombardment
Moon DW, Kim KJ
Journal of Vacuum Science & Technology A, 14(5), 2744, 1996 |
| 10 |
Resolution in Sputter Depth Profiling Assessed by AlAs/GaAs Superlattices
Kajiwara K, Shimizu R
Journal of Vacuum Science & Technology A, 13(3), 1316, 1995 |
