화학공학소재연구정보센터
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No. Article
1 A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations
Donetti L, Sampedro C, Ruiz FG, Godoy A, Gamiz F
Solid-State Electronics, 159, 19, 2019
2 Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs
Donetti L, Sampedro C, Ruiz FG, Godoy A, Gamiz F
Solid-State Electronics, 143, 49, 2018
3 A new explicit and analytical model for square Gate-All-Around MOSFETs with rounded corners
Moreno E, Villada MP, Ruiz FG, Roldan JB, Marin EG
Solid-State Electronics, 111, 180, 2015
4 Simulation study of the electron mobility in few-layer MoS2 metal-insulator-semiconductor field-effect transistors
Gonzalez-Medina JM, Ruiz FG, Marin EG, Godoy A, Gamiz F
Solid-State Electronics, 114, 30, 2015
5 Analytical model for the threshold voltage of III-V nanowire transistors including quantum effects
Marin EG, Ruiz FG, Tienda-Luna IM, Godoy A, Gamiz F
Solid-State Electronics, 92, 28, 2014
6 An analytical mobility model for square Gate-All-Around MOSFETs
Tienda-Luna IM, Roldan JB, Ruiz FG, Blanque CM, Gamiz F
Solid-State Electronics, 90, 18, 2013
7 Simulation of the electrostatic and transport properties of 3D-stacked GAA silicon nanowire FETs
Ruiz FG, Tienda-Luna IM, Godoy A, Sampedro C, Gamiz F, Donetti L
Solid-State Electronics, 59(1), 62, 2011
8 Multi-Subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI
Sampedro C, Gamiz F, Godoy A, Valin R, Garcia-Loureiro A, Ruiz FG
Solid-State Electronics, 54(2), 131, 2010
9 An analytical model for square GAA MOSFETs including quantum effects
Moreno E, Roldan JB, Ruiz FG, Barrera D, Godoy A, Gamiz F
Solid-State Electronics, 54(11), 1463, 2010
10 Phonon scattering in Si-based nanodevices
Donetti L, Gamiz F, Rodriguez N, Ruiz FG
Solid-State Electronics, 51(4), 593, 2007