화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 A review of special gate coupling effects in long-channel SOI MOSFETs with lightly doped ultra-thin bodies and their compact analytical modeling
Rudenko T, Nazarov A, Kilchytska V, Flandre D
Solid-State Electronics, 117, 66, 2016
2 On the g(m)/I-D-based approaches for threshold voltage extraction in advanced MOSFETs and their application to ultra-thin body SOI MOSFETs
Rudenko T, Arshad MKM, Raskin JP, Nazarov A, Flandre D, Kilchytska V
Solid-State Electronics, 97, 52, 2014
3 Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides
Rudenko T, Kilchytska V, Burignat S, Raskin JP, Andrieu F, Faynot O, Le Tiec Y, Landry K, Nazarov A, Lysenko VS, Flandre D
Solid-State Electronics, 54(2), 164, 2010
4 Reduction of gate-to-channel tunneling current in FinFET structures
Rudenko T, Kilchytska V, Collaert N, Jurczak M, Nazarov A, Flandre D
Solid-State Electronics, 51(11-12), 1466, 2007
5 FinFET analogue characterization from DC to 110 GHz
Lederer D, Kilchytska V, Rudenko T, Collaert N, Flandre D, Dixit A, De Meyer K, Raskin JP
Solid-State Electronics, 49(9), 1488, 2005
6 Determination of film and surface recombination in thin-film SOI devices using gated-diode technique
Rudenko T, Rudenko A, Kilchytska V, Cristoloveanu S, Ernst T, Colinge JP, Dessard V, Flandre D
Solid-State Electronics, 48(3), 389, 2004