검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Extra-low parasitic gate-to-contacts capacitance architecture for sub-14 nm transistor nodes Niebojewski H, Le Royer C, Morand Y, Rozeau O, Jaud MA, Dubois E, Poiroux T, Bensahel D Solid-State Electronics, 97, 45, 2014 |
| 2 |
A unified short-channel compact model for cylindrical surrounding-gate MOSFET Cousin B, Reyboz M, Rozeau O, Jaud MA, Ernst T, Jomaah J Solid-State Electronics, 56(1), 40, 2011 |
| 3 |
High frequency performance of sub-100 nm UTB-FDSOI featuring TiN/HfO2 gate stack Lim TC, Rozeau O, Buj C, Paccaud M, Lepilliet S, Dambrine G, Danneville F Solid-State Electronics, 53(4), 433, 2009 |
| 4 |
Continuous model for independent double gate MOSFET Reyboz M, Martin P, Poiroux T, Rozeau O Solid-State Electronics, 53(5), 504, 2009 |
| 5 |
Polysilicon high frequency devices for large area electronics: Characterization, simulation and modeling Botrel JL, Savry O, Rozeau O, Templier F, Jomaah J Thin Solid Films, 515(19), 7422, 2007 |
| 6 |
Performance and physics of sub-50 nm strained Si on Si1-xGex-on-insulator (SGOI) nMOSFETs Andrieu F, Ernst T, Faynot O, Rozeau O, Bogumilowicz Y, Hartmann JM, Brevard L, Toffoli A, Lafond D, Ghyselen B, Fournel F, Ghibaudo G, Deleonibus S Solid-State Electronics, 50(4), 566, 2006 |
| 7 |
An explicit analytical charge-based model of undoped independent double gate MOSFET Reyboz M, Rozeau O, Poiroux T, Martin P, Jomaah J Solid-State Electronics, 50(7-8), 1276, 2006 |
| 8 |
Characterization of silicon-on-sapphire material and devices for radio frequency applications Munteanu D, Cristoloveanu S, Rozeau O, Jomaah J, Boussey J, Wetzel M, de la Houssaye P, Lagnado I Journal of the Electrochemical Society, 148(4), G218, 2001 |