검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures Storm DF, Katzer DS, Deen DA, Bass R, Meyer DJ, Roussos JA, Binari SC, Paskova T, Preble EA, Evans KR Solid-State Electronics, 54(11), 1470, 2010 |
| 2 |
AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization Storm DF, Katzer DS, Roussos JA, Mittereder JA, Bass R, Binari SC, Hanser D, Preble EA, Evans KR Journal of Crystal Growth, 301, 429, 2007 |
| 3 |
Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates Storm DF, Katzer DS, Roussos JA, Mittereder JA, Bass R, Binari SC, Zhou L, Smith DJ, Hanser D, Preble EA, Evans KR Journal of Crystal Growth, 305(2), 340, 2007 |
| 4 |
Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs Katzer DS, Storm DF, Binari SC, Roussos JA, Shanabrook BV, Glaser ER Journal of Crystal Growth, 251(1-4), 481, 2003 |