화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Transmission measurements of multilayer interference filters developed for a full integration on Complementary Metal Oxide Semiconductor chips
Masarotto L, Frey L, Charles ML, Roule A, Rodriguez G, Souil R, Morales C, Larrey V
Thin Solid Films, 631, 23, 2017
2 Material engineering of GexTe100-x compounds to improve phase-change memory performances
Navarro G, Sousa V, Persico A, Pashkov N, Toffoli A, Bastien JC, Perniola L, Maitrejean S, Roule A, Zuliani P, Annunziata R, De Salvo B
Solid-State Electronics, 89, 93, 2013
3 Impact of Oxidation on Ge2Sb2Te5 and GeTe Phase-Change Properties
Gourvest E, Pelissier B, Vallee C, Roule A, Lhostis S, Maitrejean S
Journal of the Electrochemical Society, 159(4), H373, 2012
4 Comparative study of non-polar switching behaviors of NiO- and HfO2-based oxide resistive-RAMs
Jousseaume V, Fantini A, Nodin JF, Guedj C, Persico A, Buckley J, Tirano S, Lorenzi P, Vignon R, Feldis H, Minoret S, Grampeix H, Roule A, Favier S, Martinez E, Calka P, Rochat N, Auvert G, Barnes JP, Gonon P, Vallee C, Perniola L, De Salvo B
Solid-State Electronics, 58(1), 62, 2011
5 Carbon-doped GeTe: A promising material for Phase-Change Memories
Beneventi GB, Perniola L, Sousa V, Gourvest E, Maitrejean S, Bastien JC, Bastard A, Hyot B, Fargeix A, Jahan C, Nodin JF, Persico A, Fantini A, Blachier D, Toffoli A, Loubriat S, Roule A, Lhostis S, Feldis H, Reimbold G, Billon T, De Salvo B, Larcher L, Pavan P, Bensahel D, Mazoyer P, Annunziata R, Zuliani P, Boulanger F
Solid-State Electronics, 65-66, 197, 2011