검색결과 : 2건
No. | Article |
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1 |
Influence of 3C-SiC/Si (111) template properties on the strain relaxation in thick GaN films Cordier Y, Frayssinet E, Portail M, Zielinski M, Chassagne T, Korytov M, Courville A, Roy S, Nemoz M, Chmielowska M, Vennegues P, Schenk HPD, Kennard M, Bavard A, Rondi D Journal of Crystal Growth, 398, 23, 2014 |
2 |
Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition Schenk HPD, Frayssinet E, Bayard A, Rondi D, Cordier Y, Kennard M Journal of Crystal Growth, 314(1), 85, 2011 |