화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Influence of 3C-SiC/Si (111) template properties on the strain relaxation in thick GaN films
Cordier Y, Frayssinet E, Portail M, Zielinski M, Chassagne T, Korytov M, Courville A, Roy S, Nemoz M, Chmielowska M, Vennegues P, Schenk HPD, Kennard M, Bavard A, Rondi D
Journal of Crystal Growth, 398, 23, 2014
2 Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition
Schenk HPD, Frayssinet E, Bayard A, Rondi D, Cordier Y, Kennard M
Journal of Crystal Growth, 314(1), 85, 2011