검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
High temperature solar thermoelectric generator - Indoor characterization method and modeling Pereira A, Caroff T, Lorin G, Baffle T, Romanjek K, Vesin S, Kusiaku K, Duchemin H, Salvador V, Miloud-Ali N, Aixala L, Simon J Energy, 84, 485, 2015 |
| 2 |
In-depth physical investigation of GeOI pMOSFET by TCAD calibrated simulation Grandchamp B, Jaud MA, Scheiblin P, Romanjek K, Hutin L, Le Royer C, Vinet M Solid-State Electronics, 57(1), 67, 2011 |
| 3 |
Mobility in ultrathin SOI MOSFET and pseudo-MOSFET: Impact of the potential at both interfaces Hamaide G, Allibert F, Andrieu F, Romanjek K, Cristoloveanu S Solid-State Electronics, 57(1), 83, 2011 |
| 4 |
High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs Le Royer C, Damlencourt JF, Vincent B, Romanjek K, Le Cunff Y, Grampeix H, Mazzocchi V, Carron V, Nemouchi F, Hartmann JM, Arvet C, Vizioz C, Tabone C, Hutin L, Batude P, Vinet M Solid-State Electronics, 59(1), 2, 2011 |
| 5 |
High performance 70 nm gate length germanium-on-insulator pMOSFET with high-k/metal gate Romanjek K, Hutin L, Le Royer C, Pouydebasque A, Jaud MA, Tabone C, Augendre E, Sanchez L, Hartmann JM, Grampeix H, Mazzocchi V, Soliveres S, Truche R, Clavelier L, Scheiblin P, Garros X, Reimbold G, Vinet M, Boulanger F, Deleonibus S Solid-State Electronics, 53(7), 723, 2009 |
| 6 |
Investigation of 1/f noise in germanium-on-insulator 0.12 mu m PMOS transistors from weak to strong inversion Gyani J, Valenza M, Soliveres S, Martinez F, Le Royer C, Augendre E, Romanjek K, Drazek C Solid-State Electronics, 53(12), 1268, 2009 |
| 7 |
105 nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200 mm GeOI wafers Le Royer C, Clavelier L, Tabone C, Romanjek K, Deguet C, Sanchez L, Hartmann JM, Roure MC, Grampeix H, Soliveres S, Le Carval G, Truche R, Pouydebasque A, Vinet M, Deleonibus S Solid-State Electronics, 52(9), 1285, 2008 |
| 8 |
Low frequency noise characterization and modelling in ultrathin oxide MOSFETs Contaret T, Romanjek K, Boutchacha T, Ghibaudo G, Boeuf F Solid-State Electronics, 50(1), 63, 2006 |
| 9 |
Characterization of the effective mobility by split C(V) technique in sub 0.1 mu m Si and SiGePMOSFETs Romanjek K, Andrieu F, Ernst T, Ghibaudo G Solid-State Electronics, 49(5), 721, 2005 |
| 10 |
New approach for the gate current source-drain partition modeling in advanced MOSFETs Romanjek K, Lime F, Ghibaudo G, Leroux C Solid-State Electronics, 47(10), 1657, 2003 |