| 1 |
Use a systematized approach of good practices in pygas hydrogenation via APC
Bader JM, Rolland G
Hydrocarbon Processing, 91(10), 41, 2012 |
| 2 |
Influence of polymer porogens on the porosity and mechanical properties of spin coated Ultra Low k dielectrics
Jousseaume V, Rolland G, Babonneau D, Simon JP
Thin Solid Films, 517(15), 4413, 2009 |
| 3 |
Structural study of nanoporous ultra low-k dielectrics using complementary techniques: Ellipsometric porosimetry, X-ray reflectivity and grazing incidence small-angle X-ray scattering
Jousseaume V, Rolland G, Babonneau D, Simon JP
Applied Surface Science, 254(2), 473, 2007 |
| 4 |
High-temperature growth of very high germanium content SiGe virtual substrates
Bogumilowicz Y, Hartmann JM, Di Nardo C, Holliger P, Papon AM, Rolland G, Billon T
Journal of Crystal Growth, 290(2), 523, 2006 |
| 5 |
Growth kinetics of Si and SiGe on Si(100), Si(110) and Si(111) surfaces
Hartmann JM, Burdin M, Rolland G, Billon T
Journal of Crystal Growth, 294(2), 288, 2006 |
| 6 |
SiGe high-temperature growth kinetics in reduced pressure-chemical vapor deposition
Bogumilowicz Y, Hartmann JM, Rolland G, Billon T
Journal of Crystal Growth, 274(1-2), 28, 2005 |
| 7 |
Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(001) for microelectronics and optoelectronics purposes
Hartmann JM, Damlencourt JF, Bogumilowicz Y, Holliger P, Rolland G, Billon T
Journal of Crystal Growth, 274(1-2), 90, 2005 |
| 8 |
Reduced pressure-chemical vapor deposition of high Ge content Si1-xGex and high C content Si1-yCy layers for advanced metal oxide semiconductor transistors
Hartmann JM, Bogumilowicz Y, Andrieu F, Holliger P, Rolland G, Billon T
Journal of Crystal Growth, 277(1-4), 114, 2005 |
| 9 |
Growth of SiGe/Si superlattices on silicon-on-insulator substrates for multi-bridge channel field effect transistors
Hartmann JM, Holliger P, Laugier F, Rolland G, Suhm A, Ernst T, Billon T, Vulliet N
Journal of Crystal Growth, 283(1-2), 57, 2005 |
| 10 |
High germanium content SiGe virtual substrates grown at high temperatures
Bogumilowicz Y, Hartmann JM, Laugier F, Rolland G, Billon T, Cherkashin N, Claverie A
Journal of Crystal Growth, 283(3-4), 346, 2005 |
