검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
YOUR APPLICATION FOR ETERNAL LIFE HAS BEEN PARTIALLY APPROVED Rogers JW Nature, 512(7512), 108, 2014 |
| 2 |
Temperature amplification during laser heating of polycrystalline silicon microcantilevers due to temperature-dependent optical properties Serrano JR, Phinney LM, Rogers JW International Journal of Heat and Mass Transfer, 52(9-10), 2255, 2009 |
| 3 |
Pulsed laser repair of adhered surface-micromachined polycrystalline silicon cantilevers Phinney LM, Rogers JW Journal of Adhesion Science and Technology, 17(4), 603, 2003 |
| 4 |
Role of O(D-1) in the oxidation of Si(100) Kaspar T, Tuan A, Tonkyn R, Hess WP, Rogers JW, Ono Y Journal of Vacuum Science & Technology B, 21(2), 895, 2003 |
| 5 |
In situ monitoring and control of multicomponent gas-phase streams for growth of GaN via MOCVD Johnson MC, Poochinda K, Ricker NL, Rogers JW, Pearsall TP Journal of Crystal Growth, 212(1-2), 11, 2000 |
| 6 |
Self-assembly of tetraphenylporphyrin monolayers on gold substrates Boeckl MS, Bramblett AL, Hauch KD, Sasaki T, Ratner BD, Rogers JW Langmuir, 16(13), 5644, 2000 |
| 7 |
Interface control in the chemical vapor deposition of titanium dioxide on silicon(100) Tuan A, Yoon M, Medvedev V, Ono Y, Ma Y, Rogers JW Thin Solid Films, 377-378, 766, 2000 |
| 8 |
Low temperature atomic layer growth of aluminum nitride on Si(100) using dimethylethylamine alane and 1,1-dimethylhydrazine Robinson DW, Rogers JW Thin Solid Films, 372(1-2), 10, 2000 |
| 9 |
Molecularly engineered low temperature atomic layer growth of aluminum nitride on Si(100) Liu H, Rogers JW Journal of Vacuum Science & Technology A, 17(2), 325, 1999 |
| 10 |
Growth of GaAs1-xNx on GaAs(100) by chemical beam epitaxy Aardahl CL, Yun HK, Pearsall TP, Rogers JW, Qian M, Fong H, Sarikaya M Thin Solid Films, 343-344, 646, 1999 |