검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate Benyahia D, Kubiszyn L, Michalczewski K, Keblowski A, Martyniuk P, Piotrowski J, Rogalski A Journal of Crystal Growth, 483, 26, 2018 |
| 2 |
Recent progress in MOCVD growth for thermoelectrically cooled HgCdTe medium wavelength infrared photodetectors Gawron W, Martyniuk P, Keblowski A, Kolwas K, Stepien D, Piotrowski J, Madejczyk P, Pedzinska M, Rogalski A Solid-State Electronics, 118, 61, 2016 |
| 3 |
Mid-wave T2SLs InAs/GaSb single pixel PIN detector with GaAs immersion lens for HOT condition Martyniuk P, Benyahia D, Kowalewski A, Kubiszyn L, Stepien D, Gawron W, Rogalski A Solid-State Electronics, 119, 1, 2016 |
| 4 |
Fundamental limits of MWIR HgCdTe barrier detectors operating under non-equilibrium mode Kopytko M, Jozwikowski K, Rogalski A Solid-State Electronics, 100, 20, 2014 |
| 5 |
Modelling of MWIR HgCdTe complementary barrier HOT detector Martyniuk P, Rogalski A Solid-State Electronics, 80, 96, 2013 |
| 6 |
Near-room temperature MWIR HgCdTe photodiodes limited by vacancies and dislocations related to Shockley-Read-Hall centres Jozwikowski K, Kopytko M, Piotrowski J, Jozwikowska A, Orman Z, Rogalski A Solid-State Electronics, 63(1), 8, 2011 |