화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs
Sklenard B, Batude P, Rafhay Q, Martin-Bragado I, Xu CQ, Previtali B, Colombeau B, Khaja FA, Cristoloveanu S, Rivallin P, Tavernier C, Poiroux T
Solid-State Electronics, 88, 9, 2013
2 Influence of induced stress on enrichment kinetic during local Ge condensation of SiGe/SOI mesas
Dechoux N, Damlencourt JF, Rivallin P, Brianceau P, Bernasconi S, Benevent V, Vallee C, Barbe JC, Billon T, Bensahel D
Thin Solid Films, 518, S92, 2010
3 Thermal effects on H-1 and H-2 distributions determined by SIMS in atomic layer deposition of HfO2 and A1(2)O(3) using heavy water
Holliger P, Hobbs C, Jalabert D, Martin F, Pierre F, Reimbold G, Rivallin P
Applied Surface Science, 252(19), 7194, 2006