화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Fowler-Nordheim and hot carrier reliabilities of U-shaped trench-gated transistors studied by three terminal charge pumping
Passmore LJ, Sarpatwari K, Suliman SA, Awadelkarim OO, Ridley R, Dolny G, Michalowicz J, Wu CT
Thin Solid Films, 504(1-2), 302, 2006
2 Modified three terminal charge pumping technique applied to vertical transistor structures
Passmore LJ, Sarpatwari K, Suliman SA, Awadelkarim OO, Ridley R, Dolny G, Michalowicz J, Wu CT
Journal of Vacuum Science & Technology B, 23(5), 2189, 2005
3 A gas-liquid flowmeter combining vertical and horizontal pressure fluctuations induced by local void fraction variations
Toma P, Ridley R, Chen M
Journal of Energy Resources Technology-Transactions of The ASME, 125(1), 35, 2003
4 The effect of surface treatments and growth conditions on electrical characteristics of thick (> 50 nm) gate oxides
Wu CT, Ridley R, Roman P, Dolny G, Grebs T, Hao J, Ruzyllo J
Journal of the Electrochemical Society, 148(9), F184, 2001