화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Interfacial rheology and relaxation behavior of adsorption layers of the triterpenoid saponin Escin
Gimenez-Ribes G, Habibi M, Sagis LMC
Journal of Colloid and Interface Science, 563, 281, 2020
2 Impact of progressive oxide soft breakdown on metal oxide semiconductor parameters: Experiment and modeling
Gerrer L, Ribes G, Ghibaudo G, Jomaah J
Journal of Vacuum Science & Technology B, 27(1), 448, 2009
3 SiO2 interfacial layer as the origin of the breakdown of high-k dielectrics stacks
Rafik M, Ribes G, Roy D, Ghibaudd G
Journal of Vacuum Science & Technology B, 27(1), 472, 2009
4 A new CMP-less integration approach for highly scaled totally silicided (TOSI) gate bulk transistors based on the use of selective S/D Si epitaxy and ultra-low gates
Muller M, Mondot A, Aime D, Froment B, Talbot A, Roux JM, Ribes G, Morand Y, Descombes S, Gouraud P, Leverd F, Pokrant S, Toffoli A, Skotnicki T
Solid-State Electronics, 50(4), 620, 2006