검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Synaptic behaviors of HfO2 ReRAM by pulse frequency modulation Lee DK, Kim MH, Kim TH, Bang S, Choi YJ, Kim S, Cho S, Park BG Solid-State Electronics, 154, 31, 2019 |
| 2 |
Gradual switching and self-rectifying characteristics of Cu/alpha-IGZO/p(+)-Si RRAM for synaptic device application Bang S, Kim MH, Kim TH, Lee DK, Kim S, Cho S, Park BG Solid-State Electronics, 150, 60, 2018 |
| 3 |
Resistive switching in a metal-insulator-metal device with gamma-APTES as the insulator layer Lin JJ, Lin SH, Wu YL Solid-State Electronics, 136, 86, 2017 |