| 1 |
Multilevel resistive switching performance of TiO2-based flexible memory prepared by low-temperature sol-gel method with UV irradiation
Zou LL
Current Applied Physics, 24, 32, 2021 |
| 2 |
Light-induced negative differential resistance effect in a resistive switching memory device
Wang XJ, Wang YY, Feng M, Wang KY, Bai PB, Tian YM
Current Applied Physics, 20(3), 371, 2020 |
| 3 |
Water and air friendly alkali metals synthesis of the h-BN-C QDTs and the utilization in the non-volatile resistive switching memory devices
Rani A, Park HG, Song DS, Choi CJ, Lim J, Bu SD
Current Applied Physics, 20(9), 1001, 2020 |
| 4 |
Multiple resistive switching behaviours of CH3NH3PbI3 perovskite film with different metal electrodes
How GTS, Talik NA, Kar YB, Nakajima H, Tunmee S, Tong GB
Applied Surface Science, 473, 194, 2019 |
| 5 |
Flexible, multilevel, and low-operating-voltage resistive memory based on MoS2-rGO hybrid
Wu LQ, Guo JJ, Zhong W, Zhang WJ, Kang X, Chen W, Du YW
Applied Surface Science, 463, 947, 2019 |
| 6 |
Back-to-back Interface diodes induced symmetrical negative differential resistance and reversible bipolar resistive switching in beta-CuSCN trigonal pyramid micro/nanoarray
Chen WL, Zhao J, Liu B, Cheng BC, Xiao YH, Lei SJ
Applied Surface Science, 480, 13, 2019 |
| 7 |
NiO-based resistive memory devices with highly improved uniformity boosted by ionic liquid pre-treatment
Kang X, Guo JJ, Gao YJ, Ren SX, Chen W, Zhao X
Applied Surface Science, 480, 57, 2019 |
| 8 |
Synaptic plasticity of room-temperature fabricated amorphous MoOx film based memristor
Xue Q, Wang YC, Wei XH
Applied Surface Science, 479, 469, 2019 |
| 9 |
Resistive switching biodevice composed of MoS2-DNA heterolayer on the gold electrode
Yoon J, Mohammadniaei M, Choi HK, Shin M, Bharate BG, Lee T, Choi JW
Applied Surface Science, 478, 134, 2019 |
| 10 |
Room temperature deposited oxygen-deficient CeO2-x layer for multilevel resistive switching memory
Ismail M, Ahmad A, Mahmood K, Akbar T, Rana AM, Lee J, Kim S
Applied Surface Science, 483, 803, 2019 |
