검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
50 nm AlxOy ReRAM program 31% energy, 1.6x endurance, and 3.6x speed improvement by advanced cell condition adaptive verify-reset Ning SY, Iwasak TO, Takeuchi K Solid-State Electronics, 103, 64, 2015 |
| 2 |
Switching characteristics in Cu:SiO2 by chemical soak methods for resistive random access memory (ReRAM) Chin FT, Lin YH, Yang WL, Liao CH, Lin LM, Hsiao YP, Chao TS Solid-State Electronics, 103, 190, 2015 |
| 3 |
Correlation between crystallinity and resistive switching behavior of sputtered WO3 thin films Dao TBT, Pham KN, Cheng YL, Kim SS, Phan BT Current Applied Physics, 14(12), 1707, 2014 |
| 4 |
Flexible and transparent ReRAM with GZO memory layer and GZO-electrodes on large PEN sheet Kinoshita K, Okutani T, Tanaka H, Hinoki T, Agura H, Yazawa K, Ohmi K, Kishida S Solid-State Electronics, 58(1), 48, 2011 |