검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Resistive random-access memory with an a-Si/SiNx double-layer Kwon HT, Lee WJ, Choi HS, Wee D, Park YJ, Kim B, Kim MH, Kim S, Park BG, Kim Y Solid-State Electronics, 158, 64, 2019 |
| 2 |
Improved switching reliability achieved in HfOx based RRAM with mountain-like surface-graphited carbon layer Tao Y, Ding WT, Wang ZQ, Xu HY, Zhao XN, Li XH, Liu WZ, Ma JG, Liu YC Applied Surface Science, 440, 107, 2018 |
| 3 |
Parasitic engineering for RRAM control Shrestha PR, Nminibapiel DM, Veksler D, Campbell JP, Ryan JT, Baumgart H, Cheung KP Solid-State Electronics, 150, 41, 2018 |
| 4 |
Effects of plasma treatment time on surface characteristics of indium-tin-oxide film for resistive switching storage applications Chen PH, Chang TC, Chang KC, Tsai TM, Pan CH, Shih CC, Wu CH, Yang CC, Chen WC, Lin JC, Wang MH, Zheng HX, Chen MC, Sze SM Applied Surface Science, 414, 224, 2017 |
| 5 |
Unipolar resistive switching characteristics of W/Si3N4/Si memory devices with doped silicon bottom electrodes Kim S, Park BG Current Applied Physics, 17(2), 146, 2017 |
| 6 |
Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO2/Pt memory device Zhang L, Xu HY, Wang ZQ, Yu H, Ma JG, Liu YC Applied Surface Science, 360, 338, 2016 |
| 7 |
Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology Sun HT, Liu Q, Li CF, Long SB, Lv HB, Bi C, Huo ZL, Li L, Liu M Advanced Functional Materials, 24(36), 5679, 2014 |
| 8 |
Low power resistive random access memory using interface-engineered dielectric stack of SiOx/a-Si/TiOy with 1D1R-like structure Cheng CH, Chou KI, Zheng ZW, Hsu HH Current Applied Physics, 14(1), 139, 2014 |
| 9 |
Investigation on amorphous InGaZnO based resistive switching memory with low-power, high-speed, high reliability Fan YS, Liu PT, Hsu CH Thin Solid Films, 549, 54, 2013 |
| 10 |
Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor Miao F, Strachan JP, Yang JJ, Zhang MX, Goldfarb I, Torrezan AC, Eschbach P, Kelley RD, Medeiros-Ribeiro G, Williams RS Advanced Materials, 23(47), 5633, 2011 |