화학공학소재연구정보센터
검색결과 : 12건
No. Article
1 Plasmon resonance enhanced WS2 photodetector with ultra-high sensitivity and stability
Liu Y, Huang W, Chen WJ, Wang XW, Guo JX, Tian H, Zhang HN, Wang YT, Yu B, Ren TL, Xu J
Applied Surface Science, 481, 1127, 2019
2 Ferroelectric polarization effect on hysteresis behaviors of single-walled carbon nanotube network field-effect transistors with lead zirconate-titanate gating
Sun YL, Xie D, Dai RX, Sun MX, Li WW, Ren TL
Current Applied Physics, 18(3), 324, 2018
3 Field effect properties of single-layer MoS2(1-x)Se2x nanosheets produced by a one-step CVD process
Tang DX, Wang F, Zhang BJ, Li Y, Li Y, Feng YL, Han YM, Ma J, Ren TL, Zhang KL
Journal of Materials Science, 53(20), 14447, 2018
4 Toward an In Situ Phosphate Sensor in Natural Waters Using a Microfluidic Flow Loop Analyzer
Chen Y, Guo XL, Yan JC, Zhao YF, Pang Y, Jian JM, Morikado M, Wu XM, Yang Y, Ren TL
Journal of the Electrochemical Society, 165(14), B737, 2018
5 Large-Scale and High-Density pMUT Array Based on Isolated Sol-Gel PZT Membranes for Fingerprint Imaging
Chen YQ, Li YX, Chen Y, Ju ZY, Tao LQ, Pang Y, Yang Y, Ren TL
Journal of the Electrochemical Society, 164(7), B377, 2017
6 Carbonized Silk Fabric for Ultrastretchable, Highly Sensitive, and Wearable Strain Sensors
Wang CY, Li X, Gao EL, Jian MQ, Xia KL, Wang Q, Xu ZP, Ren TL, Zhang YY
Advanced Materials, 28(31), 6640, 2016
7 In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device
Tian H, Zhao HM, Wang XF, Xie QY, Chen HY, Mohammad MA, Li C, Mi WT, Bie Z, Yeh CH, Yang Y, Wong HSP, Chiu PW, Ren TL
Advanced Materials, 27(47), 7767, 2015
8 The influence of channel layer thickness on the electrical properties of ZnO TFTs
Li G, Xie D, Feng TT, Xu JL, Zhang XW, Ren TL
Solid-State Electronics, 95, 32, 2014
9 Surface acoustic wave resonators based on (002) AlN/Pt/diamond/silicon layered structure
Zhou CJ, Yang Y, Jin H, Feng B, Dong SR, Luo JK, Ren TL, Chan MS, Yang CY
Thin Solid Films, 548, 425, 2013
10 Effects of electrodes on the properties of sol-gel PZT based capacitors in FeRAM
Zhang MM, Jia Z, Ren TL
Solid-State Electronics, 53(5), 473, 2009