검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Rapid thermal processing of hafnium dioxide thin films by remote plasma atomic layer deposition as high-k dielectrics Zhang XY, Hsu CH, Cho YS, Zhang S, Lien SY, Zhu WZ, Xiong FB Thin Solid Films, 660, 797, 2018 |
| 2 |
Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric Lee DJ, Lim JW, Mun JK, Yun SJ Materials Research Bulletin, 83, 597, 2016 |
| 3 |
Enhancement of electrical characteristics and reliability in crystallized ZrO2 gate dielectrics treated with in-situ atomic layer doping of nitrogen Huang JJ, Huang LT, Tsai MC, Lee MH, Chen MJ Applied Surface Science, 305, 214, 2014 |
| 4 |
Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition Lee S, Choi H, Shin S, Park J, Ham G, Jung H, Jeon H Current Applied Physics, 14(4), 552, 2014 |