| 1 |
Enhanced Performance of MOCVD ZnO TFTs on Glass Substrates with Nitrogen-Rich Silicon Nitride Gate Dielectric
Remashan K, Choi YS, Park SJ, Jang JH
Journal of the Electrochemical Society, 157(1), H60, 2010 |
| 2 |
High Field-Effect Mobility Bottom-Gated Metallorganic Chemical Vapor Deposition ZnO Thin-Film Transistors with SiO2/Si3N4 Bilayer Gate Dielectric
Remashan K, Choi YS, Park SJ, Jang JH
Journal of the Electrochemical Society, 157(12), H1110, 2010 |
| 3 |
High Performance MOCVD-Grown ZnO Thin-Film Transistor with a Thin MgZnO Layer at Channel/Gate Insulator Interface
Remashan K, Choi YS, Park SJ, Jang JH
Journal of the Electrochemical Society, 157(12), II1121, 2010 |
| 4 |
Effect of N2O plasma treatment on the performance of ZnO TFTs
Remashan K, Hwang DK, Park SD, Bae JW, Yeom GY, Park SJ, Jang JH
Electrochemical and Solid State Letters, 11(3), H55, 2008 |
| 5 |
Modeling inversion-layer carrier mobilities in all regions of MOSFET operation
Remashan K, Wong NA, Chan K, Sim SP, Yang CY
Solid-State Electronics, 46(1), 153, 2002 |
| 6 |
Effects of octa decyl thiol (ODT) treatment on the gallium arsenide surface and interface state density
Remashan K, Bhat KN
Thin Solid Films, 342(1-2), 20, 1999 |
