화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Optimization of GaN MOVPE growth on patterned Si substrates using spectroscopic in situ reflectance
Strittmatter A, Reissmann L, Trepk T, Pohl UW, Bimberg D, Zettler JT
Journal of Crystal Growth, 272(1-4), 76, 2004
2 Influence of the reactor total pressure on optical properties of MOCVD grown InGaN layers
Strittmatter A, Reissmann L, Seguin R, Rodt S, Brostowski A, Pohl UW, Bimberg D, Hahn E, Gerthsen D
Journal of Crystal Growth, 272(1-4), 415, 2004