검색결과 : 29건
| No. | Article |
|---|---|
| 1 |
Monitoring of (reactive) ion etching (RIE) with reflectance anisotropy spectroscopy (RAS) equipment Barzen L, Richter J, Fouckhardt H, Wahl M, Kopnarsk M Applied Surface Science, 328, 120, 2015 |
| 2 |
Monitoring preparation and phase transitions of carburized W(110) by reflectance difference spectroscopy Bachmann M, Memmel N, Bertel E, Denk M, Hohage M, Zeppenfeld P Applied Surface Science, 258(24), 10123, 2012 |
| 3 |
Surface science studies including low-temperature RDS on MOCVD-prepared, As-terminated Si(100) surfaces Bork T, McMahon WE, Olson JM, Hannappel T Journal of Crystal Growth, 298, 54, 2007 |
| 4 |
Si(001) surface optical anisotropies induced by pi-conjugated overlayers and oxidation Schmidt WG, Hermann A, Fuchs F, Bechstedt F Current Applied Physics, 6(3), 525, 2006 |
| 5 |
Improved structure and performance of the GaAsSb/InP interface in a resonant tunneling diode Kollonitsch Z, Schimper HJ, Seidel U, Moller K, Neumann S, Tegude FJ, Willig F, Hannappel T Journal of Crystal Growth, 287(2), 536, 2006 |
| 6 |
Characterization of optical anisotropy in oriented poly(ethylene terephthalate) films using reflectance difference spectroscopy Schmidegg K, Sun LD, Maier GA, Keckes J, Zeppenfeld P Polymer, 47(13), 4768, 2006 |
| 7 |
Interface-related in-plane optical anisotropy of quantum wells studied by reflectance-difference spectroscopy Chen YH, Ye XL, Xu B, Zeng YP, Wang ZG Materials Science Forum, 475-479, 1777, 2005 |
| 8 |
Surface structure of InGaAs/InP(001) ordered alloy during and after growth Mori T, Hanada T, Morimura T, Shin K, Makino H, Yao T Applied Surface Science, 237(1-4), 230, 2004 |
| 9 |
Optical anisotropy and surface morphology of InGaAs lattice-mismatched with GaAS(001) Morimura T, Mori T, Cho MW, Hanada T, Yao T Current Applied Physics, 4(6), 621, 2004 |
| 10 |
Optical anisotropy of GaNAs grown on GaAS(001) substrate Mori T, Hanada T, Morimura T, Cho MW, Yao T Current Applied Physics, 4(6), 640, 2004 |