검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Monitoring of (reactive) ion etching (RIE) with reflectance anisotropy spectroscopy (RAS) equipment Barzen L, Richter J, Fouckhardt H, Wahl M, Kopnarsk M Applied Surface Science, 328, 120, 2015 |
| 2 |
Influence of plasma composition on reflectance anisotropy spectra for in situ III-V semiconductor dry-etch monitoring Barzen L, Kleinschmidt AK, Strassner J, Doering C, Fouckhardt H, Bock W, Wahl M, Kopnarski M Applied Surface Science, 357, 530, 2015 |
| 3 |
MOVPE growth of InGaAs/GaAsP-MQWs for high-power laser diodes studied by reflectance anisotropy spectroscopy Bugge F, Zorn M, Zeimer U, Pietrzak A, Erbert G, Weyers M Journal of Crystal Growth, 311(4), 1065, 2009 |
| 4 |
Application of reflectance anisotropy spectroscopy to laser-diode growth in MOVPE Zorn M, Weyers M Journal of Crystal Growth, 276(1-2), 29, 2005 |
| 5 |
Optical anisotropy and surface morphology of InGaAs lattice-mismatched with GaAS(001) Morimura T, Mori T, Cho MW, Hanada T, Yao T Current Applied Physics, 4(6), 621, 2004 |
| 6 |
Optical anisotropy of GaNAs grown on GaAS(001) substrate Mori T, Hanada T, Morimura T, Cho MW, Yao T Current Applied Physics, 4(6), 640, 2004 |