검색결과 : 11건
No. | Article |
---|---|
1 |
Vacancy formation in GaAs under different equilibrium conditions Bondarenko V, Gebauer J, Redmann F, Krause-Rehberg R Materials Science Forum, 445-6, 54, 2004 |
2 |
Improved defect profiling with slow positrons Krause-Rehberg R, Borner F, Redmann F, Egger W, Kogel G, Sperr P, Triftshauser W Applied Surface Science, 194(1-4), 210, 2002 |
3 |
Humidity-induced plasticization and antiplasticization of polyamide 6: A positron lifetime study of the local free volume Dlubek G, Redmann F, Krause-Rehberg R Journal of Applied Polymer Science, 84(2), 244, 2002 |
4 |
Interdiffusion in a particle matrix system of two miscible polymers: An investigation by positron annihilation lifetime spectroscopy and differential scanning calorimetry Dlubek G, Taesler C, Pompe G, Pionteck J, Petters K, Redmann F, Krause-Rehberg R Journal of Applied Polymer Science, 84(3), 654, 2002 |
5 |
Radiation-induced defects in 4H-and 6H-SiC epilayers studied by positron annihilation and deep-level transient spectroscopy Kawasuso A, Weidner M, Redmann F, Frank T, Krause-Rehberg R, Pensl G, Sperr P, Triftshauser W, Itoh H Materials Science Forum, 389-3, 489, 2002 |
6 |
Polytype-dependent vacancy annealing studied by positron annihilation Kawasuso A, Yoshikawa M, Maekawa M, Itoh H, Chiba T, Redmann F, Krause-Rehberg R, Weidner M, Frank T, Pensl G Materials Science Forum, 433-4, 477, 2002 |
7 |
Annealing process of defects in epitaxial SiC induced by He and electron irradiation: Positron annihilation study Kawasuso A, Redmann F, Krause-Rehberg R, Sperr P, Frank T, Weidner M, Pensl G, Itoh H Materials Science Forum, 353-356, 537, 2001 |
8 |
Detailed microscopic defect identification in GaAs Gebauer J, Staab TEM, Redmann F, Krause-Rehberg R Materials Science Forum, 363-3, 76, 2001 |
9 |
Formation of vacancy clusters during copper diffusion in semi-insulating GaAs Petters K, Gebauer J, Redmann F, Leipner HS, Krause-Rehberg R Materials Science Forum, 363-3, 111, 2001 |
10 |
Effects of illumination on positron lifetime of electron irradiated n-type 6H-SiC Redmann F, Kawasuso A, Petters K, Krause-Rehberg R, Itoh H Materials Science Forum, 363-3, 126, 2001 |