| 1 |
Flexible NiO nanocrystal-based resistive memory device fabricated by low-temperature solution-process
Yun HW, Woo HK, Oh SJ, Hong SH
Current Applied Physics, 20(2), 288, 2020 |
| 2 |
Bipolar "table with legs" resistive switching in epitaxial perovskite heterostructures
Bagdzevicius S, Boudard M, Caicedo JM, Mescot X, Rodriguez-Lamas R, Santiso J, Burriel M
Solid State Ionics, 334, 29, 2019 |
| 3 |
Electrochemically prepared oxides for resistive switching devices
Zaffora A, Macaluso R, Habazaki H, Valov I, Santamaria M
Electrochimica Acta, 274, 103, 2018 |
| 4 |
Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in operating gate bias and gate leakage current
Wang Q, Itoh Y, Tsuruoka T, Aono M, He DY, Hasegawa T
Solid State Ionics, 328, 30, 2018 |
| 5 |
Resistive switching characteristics of solution-processed Al-Zn-Sn-O films annealed by microwave irradiation
Kim TW, Baek IJ, Cho WJ
Solid-State Electronics, 140, 122, 2018 |
| 6 |
Resistive switching characteristics of solution-processed organic-inorganic blended films for flexible memory applications
Baek IJ, Cho WJ
Solid-State Electronics, 140, 129, 2018 |
| 7 |
Fabrication of resistive switching memory structure using double-sided-anodized porous alumina
Morishita Y, Hosono T, Ogawa H
Solid-State Electronics, 131, 30, 2017 |
| 8 |
Realization of Boolean Logic Functionality Using Redox-Based Memristive Devices
Siemon A, Breuer T, Aslam N, Ferch S, Kim W, van den Hurk J, Rana V, Hoffmann-Eifert S, Waser R, Menzel S, Linn E
Advanced Functional Materials, 25(40), 6414, 2015 |
| 9 |
Ultra-Low Voltage and Ultra-Low Power Consumption Nonvolatile Operation of a Three-Terminal Atomic Switch
Wang Q, Itoh Y, Tsuruoka T, Aono M, Hasegawa T
Advanced Materials, 27(39), 6029, 2015 |
| 10 |
Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices
Lubben M, Karakolis P, Ioannou-Sougleridis V, Normand P, Dimitrakis P, Valov I
Advanced Materials, 27(40), 6202, 2015 |
