화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers
Kappers MJ, Datta R, Oliver RA, Rayment FDG, Vickers ME, Humphreys CJ
Journal of Crystal Growth, 300(1), 70, 2007
2 Strain effects of AIN interlayers for MOVPE growth of crack-free AlGaN and AIN/GaN multilayers on GaN
McAleese C, Kappers MJ, Rayment FDG, Cherns P, Humphreys CJ
Journal of Crystal Growth, 272(1-4), 475, 2004
3 GaN/InGaN quantum wells grown in a close coupled showerhead reactor
Thrush EJ, Kappers MJ, Dawson P, Vickers ME, Barnard J, Graham D, Makaronidis G, Rayment FDG, Considine L, Humphreys CJ
Journal of Crystal Growth, 248, 518, 2003