검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Origin of tensile strain in GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy Agrawal M, Dharmarasu N, Radhakrishnan K, Ravikiran L Journal of Crystal Growth, 378, 283, 2013 |
| 2 |
Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy Agrawal M, Dharmarasu N, Radhakrishnan K, Ravikiran L Thin Solid Films, 520(24), 7109, 2012 |