검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
Temperature-Dependent Hole Mobility and Its Limit in Crystal-Phase P3HT Calculated from First Principles Lucke A, Ortmann F, Panhans M, Sanna S, Rauls E, Gerstmann U, Schmidt WG Journal of Physical Chemistry B, 120(24), 5572, 2016 |
| 2 |
Influence of Structural Defects and Oxidation onto Hole Conductivity in P3HT Lucke A, Schmidt WG, Rauls E, Ortmann F, Gerstmann U Journal of Physical Chemistry B, 119(21), 6481, 2015 |
| 3 |
Understanding the cubic AlN growth plane from first principles Rauls E, Wiebe J, Schmidt WG Journal of Crystal Growth, 312(20), 2892, 2010 |
| 4 |
The role of the chiral modifier on the enantioselective hydrogenation of methyl pyruvate on Pt(111) Rauls E, Hammer B Catalysis Letters, 106(3-4), 111, 2006 |
| 5 |
Supramolecular nanopatterns self-assembled by adenine-hymine quartets at the liquid/solid interface Mamdouh W, Dong MD, Xu SL, Rauls E, Besenbacher F Journal of the American Chemical Society, 128(40), 13305, 2006 |
| 6 |
Chiral switching by spontaneous conformational change in adsorbed organicmolecules Weigelt S, Busse C, Petersen L, Rauls E, Hammer B, Gothelf KV, Besenbacher F, Linderoth TR Nature Materials, 5(2), 112, 2006 |
| 7 |
Influence of the growth-surface on the incorporation of phosphorus in SiC Rauls E, Gerstmann U, Frauenheim T Applied Surface Science, 243(1-4), 345, 2005 |
| 8 |
A new model for the D-I-luminescence in 6H-SiC Rauls E, Gerstmann U, Pinheiro MVB, Greulich-Weber S, Spaeth JM Materials Science Forum, 483, 465, 2005 |
| 9 |
The VSiCSi(SiCCSi) complex in electron-irradiated 6H-SiC Pinheiro MVB, Rauls E, Gerstmann U, Greulich-Weber S, Spaeth JM Materials Science Forum, 483, 477, 2005 |
| 10 |
Ab initio calculation of shallow defects: Results for P-related donors in SiC Gerstmann U, Rauls E, Overhof H, Frauenheim T Materials Science Forum, 483, 501, 2005 |