검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Impact of threshold voltage extraction methods on semiconductor device variability Espinera G, Nagy D, Garcia-Loureiro A, Seoane N, Indalecio G Solid-State Electronics, 159, 165, 2019 |
| 2 |
NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants Martinez A, Aldegunde M, Brown AR, Roy S, Asenov A Solid-State Electronics, 71, 101, 2012 |
| 3 |
Drain-current variability in 45 nm bulk N-MOSFET with and without pocket-implants Mezzomo CM, Bajolet A, Cathignol A, Ghibaudo G Solid-State Electronics, 65-66, 163, 2011 |
| 4 |
Modeling local electrical fluctuations in 45 nm heavily pocket-implanted bulk MOSFET Mezzomo CM, Bajolet A, Cathignol A, Josse E, Ghibaudo G Solid-State Electronics, 54(11), 1359, 2010 |
| 5 |
Sub-25 nm UTB SOISRAM cell under the influence of discrete random dopants Samsudin K, Cheng B, Brown AR, Roy S, Asenov A Solid-State Electronics, 50(4), 660, 2006 |