검색결과 : 10건
No. | Article |
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1 |
Static and low frequency noise characterization of ultra-thin body InAs MOSFETs Karatsori TA, Pastorek M, Theodorou CG, Fadjie A, Wichmann N, Desplanque L, Wallart X, Bollaert S, Dimitriadis CA, Ghibaudo G Solid-State Electronics, 143, 56, 2018 |
2 |
Systematic method for electrical characterization of random telegraph noise in MOSFETs Marquez C, Rodriguez N, Gamiz F, Ohata A Solid-State Electronics, 128, 115, 2017 |
3 |
Investigation of low-frequency noise of 28-nm technology process of high-k/metal gate p-MOSFETs with fluorine incorporation Kao TH, Chang SJ, Fang YK, Huang PC, Wang BC, Wu CY, Wu SL Solid-State Electronics, 115, 7, 2016 |
4 |
New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM Maestro M, Diaz J, Crespo-Yepes A, Gonzalez MB, Martin-Martinez J, Rodriguez R, Nafria M, Campabadal F, Aymerich X Solid-State Electronics, 115, 140, 2016 |
5 |
Electrical characterization of Random Telegraph Noise in Fully-Depleted Silicon-On-Insulator MOSFETs under extended temperature range and back-bias operation Marquez C, Rodriguez N, Gamiz F, Ruiz R, Ohata A Solid-State Electronics, 117, 60, 2016 |
6 |
Anomalous random telegraph noise and temporary phenomena in resistive random access memory Puglisi FM, Larcher L, Padovani A, Pavan P Solid-State Electronics, 125, 204, 2016 |
7 |
Array-level stability enhancement of 50 nm AlxOy ReRAM Iwasaki TO, Ning SY, Yamazawa H, Takeuchi K Solid-State Electronics, 114, 1, 2015 |
8 |
Dependence on an oxide trap's location of random telegraph noise (RTN) in GIDL current of n-MOSFET Gia QN, Yoo SW, Lee H, Shin H Solid-State Electronics, 92, 20, 2014 |
9 |
RTS noise characterization of HfOx RRAM in high resistive state Puglisi FM, Pavan P, Padovani A, Larcher L, Bersuker G Solid-State Electronics, 84, 160, 2013 |
10 |
Random telegraph noise in carbon nanotubes and peapods Jhang SH, Lee SW, Lee DS, Yu HY, Dettlaff U, Campbell EEB, Roth S, Park YW Current Applied Physics, 6(6), 987, 2006 |