화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Static and low frequency noise characterization of ultra-thin body InAs MOSFETs
Karatsori TA, Pastorek M, Theodorou CG, Fadjie A, Wichmann N, Desplanque L, Wallart X, Bollaert S, Dimitriadis CA, Ghibaudo G
Solid-State Electronics, 143, 56, 2018
2 Systematic method for electrical characterization of random telegraph noise in MOSFETs
Marquez C, Rodriguez N, Gamiz F, Ohata A
Solid-State Electronics, 128, 115, 2017
3 Investigation of low-frequency noise of 28-nm technology process of high-k/metal gate p-MOSFETs with fluorine incorporation
Kao TH, Chang SJ, Fang YK, Huang PC, Wang BC, Wu CY, Wu SL
Solid-State Electronics, 115, 7, 2016
4 New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM
Maestro M, Diaz J, Crespo-Yepes A, Gonzalez MB, Martin-Martinez J, Rodriguez R, Nafria M, Campabadal F, Aymerich X
Solid-State Electronics, 115, 140, 2016
5 Electrical characterization of Random Telegraph Noise in Fully-Depleted Silicon-On-Insulator MOSFETs under extended temperature range and back-bias operation
Marquez C, Rodriguez N, Gamiz F, Ruiz R, Ohata A
Solid-State Electronics, 117, 60, 2016
6 Anomalous random telegraph noise and temporary phenomena in resistive random access memory
Puglisi FM, Larcher L, Padovani A, Pavan P
Solid-State Electronics, 125, 204, 2016
7 Array-level stability enhancement of 50 nm AlxOy ReRAM
Iwasaki TO, Ning SY, Yamazawa H, Takeuchi K
Solid-State Electronics, 114, 1, 2015
8 Dependence on an oxide trap's location of random telegraph noise (RTN) in GIDL current of n-MOSFET
Gia QN, Yoo SW, Lee H, Shin H
Solid-State Electronics, 92, 20, 2014
9 RTS noise characterization of HfOx RRAM in high resistive state
Puglisi FM, Pavan P, Padovani A, Larcher L, Bersuker G
Solid-State Electronics, 84, 160, 2013
10 Random telegraph noise in carbon nanotubes and peapods
Jhang SH, Lee SW, Lee DS, Yu HY, Dettlaff U, Campbell EEB, Roth S, Park YW
Current Applied Physics, 6(6), 987, 2006