검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Low-temperature dopant activation technology using elevated Ge-S/D structure Takeuchi H, Ranade P, King TJ Applied Surface Science, 224(1-4), 73, 2004 |
| 2 |
Observation of boron and arsenic mediated interdiffusion across germaniun/silicon interfaces Ranade P, Takeuchi H, Subramanian V, King TJ Electrochemical and Solid State Letters, 5(2), G5, 2002 |
| 3 |
Work function engineering of molybdenum gate electrode by nitrogen implantation Ranade P, Takeuchi H, King TJ, Hu CM Electrochemical and Solid State Letters, 4(11), G85, 2001 |