검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Polarity governs atomic interaction through two-dimensional materials Kong W, Li HS, Qiao K, Kim Y, Lee K, Nie YF, Lee D, Osadchy T, Molnar RJ, Gaskill DK, Myers-Ward RL, Daniels KM, Zhang YW, Sundram S, Yu Y, Bae SH, Rajan S, Shao-Horn Y, Cho K, Ougazzaden A, Grossman JC, Kim J Nature Materials, 17(11), 999, 2018 |
| 2 |
Diversity and Bioprospective Potential (Cold-Active Enzymes) of Cultivable Marine Bacteria from the Subarctic Glacial Fjord, Kongsfjorden Prasad S, Manasa P, Buddhi S, Tirunagari P, Begum Z, Rajan S, Shivaji S Current Microbiology, 68(2), 233, 2014 |
| 3 |
Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors Arehart AR, Sasikumar A, Rajan S, Via GD, Poling B, Winningham B, Heller ER, Brown D, Pei Y, Recht F, Mishra UK, Ringel SA Solid-State Electronics, 80, 19, 2013 |
| 4 |
Conformational Control of the Ste5 Scaffold Protein Insulates Against MAP Kinase Misactivation Zalatan JG, Coyle SM, Rajan S, Sidhu SS, Lim WA Science, 337(6099), 1218, 2012 |
| 5 |
Conformational Control of the Ste5 Scaffold Protein Insulates Against MAP Kinase Misactivation Zalatan JG, Coyle SM, Rajan S, Sidhu SS, Lim WA Science, 337(6099), 1218, 2012 |
| 6 |
Limiting Gas Liquid Flows and Mass Transfer in a Novel Rotating Packed Bed (HiGee) Rajan S, Kumar M, Ansari MJ, Rao DP, Kaistha N Industrial & Engineering Chemistry Research, 50(2), 986, 2011 |
| 7 |
Aspartate 112 is the selectivity filter of the human voltage-gated proton channel Musset B, Smith SME, Rajan S, Morgan D, Cherny VV, DeCoursey TE Nature, 480(7376), 273, 2011 |
| 8 |
Turn-on voltage engineering and enhancement mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces Tripathi N, Jindal V, Shahedipour-Sandvik F, Rajan S, Vert A Solid-State Electronics, 54(11), 1291, 2010 |
| 9 |
Smooth Top-Down Photoelectrochemical Etching of m-Plane GaN Tamboli AC, Schmidt MC, Rajan S, Speck JS, Mishra UK, DenBaars SP, Hu EL Journal of the Electrochemical Society, 156(1), H47, 2009 |
| 10 |
Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy (MBE) Poblenz C, Waltereit P, Rajan S, Mishra UK, Speck JS, Chin R, Smorchkova I, Heying B Journal of Vacuum Science & Technology B, 23(4), 1562, 2005 |