검색결과 : 17건
| No. | Article |
|---|---|
| 1 |
Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric Rafi JM, Pellegrini G, Fadeyev V, Galloway Z, Sadrozinski HFW, Christophersen M, Phlips BF, Lynn D, Kierstead J, Hoeferkamp M, Gorelov I, Palni P, Wang R, Seidel S Solid-State Electronics, 116, 38, 2016 |
| 2 |
2 MeV electron irradiation effects on the electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics Rafi JM, Campabadal F, Ohyama H, Takakura K, Tsunoda I, Zabala M, Beldarrain O, Gonzalez MB, Garcia H, Castan H, Gomez A, Duenas S Solid-State Electronics, 79, 65, 2013 |
| 3 |
Impact of electrical stress on the electrical characteristics of 2 MeV electron irradiated metal-oxide-silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics Rafi JM, Gonzalez MB, Takakura K, Tsunoda I, Yoneoka M, Beldarrain O, Zabala M, Campabadal F Solid-State Electronics, 89, 198, 2013 |
| 4 |
2 MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon Garcia H, Castan H, Duenas S, Bailon L, Campabadal F, Rafi JM, Zabala M, Beldarrain O, Ohyama H, Takakura K, Tsunoda I Thin Solid Films, 534, 482, 2013 |
| 5 |
Modeling the breakdown statistics of Al2O3/HfO2 nanolaminates grown by atomic-layer-deposition Conde A, Martinez C, Jimenez D, Miranda E, Rafi JM, Campabadal F, Sune J Solid-State Electronics, 71, 48, 2012 |
| 6 |
Germanium doping for improved silicon substrates and devices Vanhellemont J, Chen J, Lauwaert J, Vrielinck H, Xu W, Yang D, Rafi JM, Ohyama H, Simoen E Journal of Crystal Growth, 317(1), 8, 2011 |
| 7 |
Deposition Temperature and Thermal Annealing Effects on the Electrical Characteristics of Atomic Layer Deposited Al2O3 Films on Silicon Rafi JM, Zabala M, Beldarrain O, Campabadal F Journal of the Electrochemical Society, 158(5), G108, 2011 |
| 8 |
What Do We Know about Hydrogen-Induced Thermal Donors in Silicon? Simoen E, Huang YL, Ma Y, Lauwaert J, Clauws P, Rafi JM, Ulyashin A, Claeys C Journal of the Electrochemical Society, 156(6), H434, 2009 |
| 9 |
Progressive degradation of TiN/SiON and TiN/HfO2 gate stack triple gate SOI nFinFETs subjected to electrical stress Rafi JM, Simoen E, Mercha A, Collaert N, Campabadal F, Claeys C Journal of Vacuum Science & Technology B, 27(1), 453, 2009 |
| 10 |
Gate induced floating body effects in TiN/SiON and TiN/HfO2 gate stack triple gate SOI nFinFETs Rafi JM, Simoen E, Mercha A, Collaert N, Hayama K, Campabadal F, Claeys C Solid-State Electronics, 51(9), 1201, 2007 |