| 1 |
Copper Rich Cu1-xNix Alloys (0.05 < x < 0.15) Electrodeposited from Acid Sulfate-Based Electrolyte with Benzotriazole Additive for Microbump Metallization for 3D Stacked Integrated Circuits
Haesevoets KPS, Radisic A, Vereecken PM
Journal of the Electrochemical Society, 166(8), D315, 2019 |
| 2 |
Differential Inhibition during Cu Electrodeposition on Ru: Combined Electrochemical and Real-Time TEM Studies
Vereecken PM, Radisic A, Ross FM
Journal of the Electrochemical Society, 166(1), D3129, 2018 |
| 3 |
Nanometer-Thin Graphitic Carbon Buffer Layers for Electrolytic MnO2 for Thin-Film Energy Storage Devices
Deheryan S, Zargouni Y, Sinha R, Put B, Radisic A, Heyns M, Vereecken PM
Journal of the Electrochemical Society, 164(2), A538, 2017 |
| 4 |
The Effect of the Substrate Characteristics on the Electrochemical Nucleation and Growth of Copper
Nagar M, Radisic A, Strubbe K, Vereecken PM
Journal of the Electrochemical Society, 163(12), D3053, 2016 |
| 5 |
The Limitation and Optimization of Bottom-Up Growth Mode in Through Silicon Via Electroplating
Yang L, Radisic A, Deconinck J, Vereeeken P
Journal of the Electrochemical Society, 162(14), D599, 2015 |
| 6 |
The Effect of Polyether Suppressors on the Nucleation and Growth of Copper on RuTa Seeded Substrate for Direct Copper Plating
Nagar M, Radisic A, Strubbe K, Vereecken PM
Electrochimica Acta, 127, 315, 2014 |
| 7 |
Stochastic Modeling of Polyethylene Glycol as a Suppressor in Copper Electroplating
Yang L, Radisic A, Deconinck J, Vereecken PM
Journal of the Electrochemical Society, 161(5), D269, 2014 |
| 8 |
Wafer Scale Copper Direct Plating on Thin PVD RuTa Layers: A Route to Enable Filling 30 nm Features and Below?
Armini S, El-Mekki Z, Nagar M, Radisic A, Vereecken PM
Journal of the Electrochemical Society, 161(10), D564, 2014 |
| 9 |
The effect of cupric ion concentration on the nucleation and growth of copper on RuTa seeded substrates
Nagar M, Radisic A, Strubbe K, Vereecken PM
Electrochimica Acta, 92, 474, 2013 |
| 10 |
Electroless Cu deposition on atomic layer deposited Ru as novel seed formation process in through-Si vias
Inoue F, Philipsen H, Radisic A, Armini S, Civale Y, Leunissen P, Kondo M, Webb E, Shingubara S
Electrochimica Acta, 100, 203, 2013 |
