화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Study on the surface of AlGaInP
Lian H, Wang QP, Cheng XK, Wei AJ, Wang YR
Applied Surface Science, 218(1-4), 12, 2003
2 A comparative study of high-temperature aluminum post-implantation annealing in 6H-and 4H-SiC, non-uniform temperature effects
Lazar M, Raynaud C, Planson D, Locatelli ML, Isoird K, Ottaviani L, Chante JP, Nipoti R, Poggi A, Cardinali G
Materials Science Forum, 389-3, 827, 2002
3 Low-temperature thermal oxidation of ion-amorphized 6H-SiC
Nipoti R, Parisini A, Poggi A
Materials Science Forum, 389-3, 1109, 2002
4 Improved annealing process for 6H-SiC p(+)-n junction creation by Al implantation
Lazar M, Ottaviani L, Locatelli ML, Planson D, Canut B, Chante JP
Materials Science Forum, 338-3, 921, 2000
5 Analysis of dislocation densities and nanopipe formation in MBE-grown AlN-layers
Ebling DG, Kirste L, Rattunde M, Portmann J, Brenn R, Benz KW, Tillmann K
Materials Science Forum, 338-3, 1549, 2000