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| No. | Article |
|---|---|
| 1 |
Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H-SiC wafers Yang Y, Guo JQ, Goue O, Raghothamachar B, Dudley M, Chung G, Sanchez E, Quast J, Manning I, Hansen D Journal of Crystal Growth, 452, 35, 2016 |