| 1 |
Depletion length in semiconductor nanostructures with spherical symmetry
Borblik VL
Solid-State Electronics, 114, 171, 2015 |
| 2 |
Three-state resistive switching in HfO2-based RRAM
Lian XJ, Miranda E, Long SB, Perniola L, Liu M, Sune J
Solid-State Electronics, 98, 38, 2014 |
| 3 |
Surface structural analysis of electrochemically fabricated Ag quantum wire by its interactions with NH3 molecules in an aqueous environment
Dong XD, Liu JH, Zhang BL, Xia Y
Electrochimica Acta, 74, 78, 2012 |
| 4 |
Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (775)B GaAs substrates by molecular beam epitaxy
Higuchi Y, Osaki S, Kitada T, Shimomura S, Takasuka Y, Ogura M, Hiyamizu S
Solid-State Electronics, 50(6), 1137, 2006 |
| 5 |
Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation
Shiozaki N, Anantathanasarn S, Sato T, Hashizume T, Hasegawa H
Applied Surface Science, 244(1-4), 71, 2005 |
| 6 |
Study on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates
Oikawa T, Ishikawa F, Sato T, Hashizume T, Hasegawa H
Applied Surface Science, 244(1-4), 84, 2005 |
| 7 |
Structural and optical properties of InAs/In0.52Al0.48As self-assembled quantum wires on InP(001)
Wang YL, Chen YH, Wu J, Lei W, Wang ZG, Zeng YP
Journal of Crystal Growth, 284(3-4), 306, 2005 |
| 8 |
Molecular beam epitaxy of semiconductor nanostructures based on SiC
Fissel A
Materials Science Forum, 483, 163, 2005 |
| 9 |
여러 가지 높이를 갖는 삼각형 구조 InGaAs/GaAs 양자세선 구조 성장
김성일, 김영환, 한일기
Korean Journal of Materials Research, 14(6), 399, 2004 |
| 10 |
Directional effects on bound quantum states for trench oxide quantum wires on (100)-silicon
Trellakis A, Ravaioli U
Solid-State Electronics, 48(3), 367, 2004 |
