| 1 |
Comparative study of oxidizing ambient infused with varying nitrogen flow rates for fabrication of ternary nitridedAlZrObasedMOScapacitor
Quah HJ, Hassan Z, Lim WF
International Journal of Energy Research, 45(3), 3838, 2021 |
| 2 |
Preparation and characterisation of aluminium zirconium oxide formetal-oxide-semiconductorcapacitor
Quah HJ, Hassan Z, Lim WF
International Journal of Energy Research, 44(13), 10562, 2020 |
| 3 |
Passivation of silicon substrate using two-step grown ternary aluminium doped zirconium oxide
Quah HJ, Hassan Z, Lim WF
Applied Surface Science, 493, 411, 2019 |
| 4 |
Porous Formation in p-Type Gallium Nitride Films via 50 Hz Operated Alternating Current-Assisted Photo-Electrochemical Etching in Methanol-Sulfuric Acid Solution
Lim WF, Hassan Z, Ahmed NM, Quah HJ
Journal of the Electrochemical Society, 165(10), H620, 2018 |
| 5 |
Effects of rapid thermal annealing on structural, chemical, and electrical characteristics of atomic-layer deposited lanthanum doped zirconium dioxide thin film on 4H-SiC substrate
Lim WF, Quah HJ, Lu QF, Mu YF, Ismail WAW, Rahim BA, Esa SR, Kee YY, Zhao CZ, Hassan Z, Cheong KY
Applied Surface Science, 365, 296, 2016 |
| 6 |
Porous Quaternary Al0.1In0.1Ga0.8N Film Formation via Photoelectrochemical Etching in HF:C2H5OH Electrolyte
Lim WF, Quah HJ, Hassan Z, Radzali R, Zainal N, Yam FK
Journal of the American Ceramic Society, 99(7), 2395, 2016 |
| 7 |
Surface Alteration of Planar P-Type Gallium Nitride to Porous Structure Using 50 Hz Alternating Current-Assisted Photo-Electrochemical Etching Route
Quah HJ, Ahmed NM, Hassan Z, Lim WF
Journal of the Electrochemical Society, 163(8), H642, 2016 |
| 8 |
Effects of CNTs content and milling time on mechanical behavior of MWCNT-reinforced aluminum nanocomposites
Ostovan F, Matori KA, Toozandehjani M, Oskoueian A, Yusoff HM, Yunus R, Ariff AHM, Quah HJ, Lim WF
Materials Chemistry and Physics, 166, 160, 2015 |
| 9 |
Characterization of ultrathin Al2O3 gate oxide deposited by RF-magnetron sputtering on gallium nitride epilayer on sapphire substrate
Quah HJ, Cheong KY
Materials Chemistry and Physics, 148(3), 592, 2014 |
| 10 |
Current conduction mechanisms of RF-Magnetron sputtered Y2O3 gate oxide on gallium nitride
Quah HJ, Cheong KY
Current Applied Physics, 13(7), 1433, 2013 |
